Innovative systems exploring the flexibility and the transparency of modern\nsemiconducting materials are being widely researched by the scientific community and by several\ncompanies. For a low-cost production and large surface area applications, thin-film transistors (TFTs)\nare the key elements driving the system currents. In order to maintain a cost efficient integration\nprocess, solution based materials are used as they show an outstanding tradeoff between cost and\nsystem complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using\na high-k resin as gate dielectric. The performance in dependence on the transistor structure has\nbeen investigated, and inverted staggered setups depict an improved performance over the coplanar\ndevice increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of\nthe TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up\nnetwork and an active TFT in the pull-down network were integrated. The inverters show reasonable\nswitching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the\nsupply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to\npolymeric templates, the fabrication process is fully compatible to flexible substrates.
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